Optimization of 14NM double gate Bi-GFET for lower leakage current

Optimization of 14NM double gate Bi-GFET for lower leakage current

In recent years, breakthroughs in electronics technology have upgraded the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted...

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Bibliographic Details
Main Authors: Abdul Hamid, Afifah Maheran, Mohd Nizam, Nur Hazwani Naili, Salehuddin, Fauziyah, Mohd Zain, Anis Suhaila, Zainul Abidin, Noor Faizah, Kaharudin, Khairil Ezwan
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2023
Online Access:http://eprints.utem.edu.my/id/eprint/27132/2/FULL%20PAPER.PDF
http://eprints.utem.edu.my/id/eprint/27132/
http://telkomnika.uad.ac.id/index.php/TELKOMNIKA/article/view/23462
http://doi.org/10.12928/telkomnika.v21i1.23462
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Institution: Universiti Teknikal Malaysia Melaka
Language: English

Internet

http://eprints.utem.edu.my/id/eprint/27132/2/FULL%20PAPER.PDF
http://eprints.utem.edu.my/id/eprint/27132/
http://telkomnika.uad.ac.id/index.php/TELKOMNIKA/article/view/23462
http://doi.org/10.12928/telkomnika.v21i1.23462

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