Optimization of 14NM double gate Bi-GFET for lower leakage current

• Main Authors: Abdul Hamid, Afifah Maheran, Mohd Nizam, Nur Hazwani Naili, Salehuddin, Fauziyah, Mohd Zain, Anis Suhaila, Zainul Abidin, Noor Faizah, Kaharudin, Khairil Ezwan
• Format: Article
• Language: English
• Published: Universitas Ahmad Dahlan 2023
• Online Access: http://eprints.utem.edu.my/id/eprint/27132/2/FULL%20PAPER.PDF; http://eprints.utem.edu.my/id/eprint/27132/; http://telkomnika.uad.ac.id/index.php/TELKOMNIKA/article/view/23462; http://doi.org/10.12928/telkomnika.v21i1.23462
• Institution: Universiti Teknikal Malaysia Melaka

In recent years, breakthroughs in electronics technology have upgraded the physical properties of the metal oxide semiconductor field effect transistor (MOSFET) toward smaller sizes and improvements in both quality and performance. Hence, the growth field effect transistor (GFET) is being promoted...