Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs
In this paper, a new physically based analytical threshold-voltage model is presented for biaxial ultrathin strained Silicon (s-Si) MOSFETs for tbe first time, taking into account different doping layers in depletion layer. 'With the ultrathin strained si thickness which is less then De-Broglie...
محفوظ في:
| المؤلفون الرئيسيون: | , , |
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| التنسيق: | Conference or Workshop Item |
| منشور في: |
2009
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/14823/ http://www.internano.org/node/3453 |
| الوسوم: |
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| المؤسسة: | Universiti Teknologi Malaysia |
| الملخص: | In this paper, a new physically based analytical threshold-voltage model is presented for biaxial ultrathin strained Silicon (s-Si) MOSFETs for tbe first time, taking into account different doping layers in depletion layer. 'With the ultrathin strained si thickness which is less then De-Broglie wave length (:::::10nm), the effective density of states function is totally different with the thick strained si. This directly affects the Oatband voltage and built-in voltage. Thus, this novel model is taking into account the new flatband voltage and built-in voltage, including the important parameters such as Ge mole fraction in SiGe layer, body and channel doping, strained-Si and SiCe thickness. channel length. |
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