Analytical threshold voltage model of nanoscale biaxial ultrathin strained-Si MOSFETs

• Main Authors: Heong, Yau Wei, Ahmadi, Mohammad Taghi, Ismail, Razali
• Format: Conference or Workshop Item
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/14823/; http://www.internano.org/node/3453
• Institution: Universiti Teknologi Malaysia

In this paper, a new physically based analytical threshold-voltage model is presented for biaxial ultrathin strained Silicon (s-Si) MOSFETs for tbe first time, taking into account different doping layers in depletion layer. 'With the ultrathin strained si thickness which is less then De-Broglie wave length (:::::10nm), the effective density of states function is totally different with the thick strained si. This directly affects the Oatband voltage and built-in voltage. Thus, this novel model is taking into account the new flatband voltage and built-in voltage, including the important parameters such as Ge mole fraction in SiGe layer, body and channel doping, strained-Si and SiCe thickness. channel length.