Numerical analysis of carrier statistics in low-dimensional nanostructure devices
The carrier statistics for low-dimensional nanostructure is elaborated. The density of state (DOS) is proportional to d D ? where d is the dimensionality of the nanostructure and D ? is the De- Broglie wavelength proportion of Fermi-Dirac (FD) integral that covers the carrier statistics to all degen...
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my.utm.210292017-11-01T04:17:20Z http://eprints.utm.my/id/eprint/21029/ Numerical analysis of carrier statistics in low-dimensional nanostructure devices Saad, Ismail Taghi Ahmadi, M. Riyadi, Munawar A. Ismail, Razali Arora, Vijay K. T Technology (General) TK Electrical engineering. Electronics Nuclear engineering The carrier statistics for low-dimensional nanostructure is elaborated. The density of state (DOS) is proportional to d D ? where d is the dimensionality of the nanostructure and D ? is the De- Broglie wavelength proportion of Fermi-Dirac (FD) integral that covers the carrier statistics to all degeneracy level. In the non-degenerate regime the results replicate what is expected from the Boltzmann statistics. However, the results vary in degenerate regime. The results for all dimensions are numerically analyzed and compared for all three Cartesian directions. With appropriate DOS, the carrier concentration in all dimensions is obtained based on the FD statistic. Fermi energy with respect to band edge is a function of temperature that is independent of the carrier concentration in the non-degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. Penerbit UTM Press 2009-06 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/21029/3/IsmailSaad2009_NumericalAnalysisofCarrierStatistics.pdf text/html en http://eprints.utm.my/id/eprint/21029/4/jurnalteknologi/article/view/170 Saad, Ismail and Taghi Ahmadi, M. and Riyadi, Munawar A. and Ismail, Razali and Arora, Vijay K. (2009) Numerical analysis of carrier statistics in low-dimensional nanostructure devices. Jurnal Teknologi, 50 (D). pp. 109-117. ISSN 2180-3722 DOI:10.11113/jt.v50.170 |
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T Technology (General) TK Electrical engineering. Electronics Nuclear engineering Saad, Ismail Taghi Ahmadi, M. Riyadi, Munawar A. Ismail, Razali Arora, Vijay K. Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
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The carrier statistics for low-dimensional nanostructure is elaborated. The density of state (DOS) is proportional to d D ? where d is the dimensionality of the nanostructure and D ? is the De- Broglie wavelength proportion of Fermi-Dirac (FD) integral that covers the carrier statistics to all degeneracy level. In the non-degenerate regime the results replicate what is expected from the Boltzmann statistics. However, the results vary in degenerate regime. The results for all dimensions are numerically analyzed and compared for all three Cartesian directions. With appropriate DOS, the carrier concentration in all dimensions is obtained based on the FD statistic. Fermi energy with respect to band edge is a function of temperature that is independent of the carrier concentration in the non-degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. |
format |
Article |
author |
Saad, Ismail Taghi Ahmadi, M. Riyadi, Munawar A. Ismail, Razali Arora, Vijay K. |
author_facet |
Saad, Ismail Taghi Ahmadi, M. Riyadi, Munawar A. Ismail, Razali Arora, Vijay K. |
author_sort |
Saad, Ismail |
title |
Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
title_short |
Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
title_full |
Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
title_fullStr |
Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
title_full_unstemmed |
Numerical analysis of carrier statistics in low-dimensional nanostructure devices |
title_sort |
numerical analysis of carrier statistics in low-dimensional nanostructure devices |
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Penerbit UTM Press |
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2009 |
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http://eprints.utm.my/id/eprint/21029/3/IsmailSaad2009_NumericalAnalysisofCarrierStatistics.pdf http://eprints.utm.my/id/eprint/21029/4/jurnalteknologi/article/view/170 http://eprints.utm.my/id/eprint/21029/ |
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