Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application
In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensi...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/47503/ http://dx.doi.org/10.1007/978-3-642-35264-5_53 |
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| Institution: | Universiti Teknologi Malaysia |
| Summary: | In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensing membrane is deposited on the other end extended from the metal/polysilicon gate. This type of ion sensor is suitable for in vivo and in vitro measurement, especially for biosensor applications. Basic concept, fabrication techniques and process/device characterization of EGFET for biosensor development will be discussed in this paper. To support the fabrication process, a simulation study of the process flow using the CoventorWare simulator and the Silvaco Athena process simulator has been done. The results showed good current-voltage characteristics of a multi-finger structure transistor suitable to be used for biosensor transducer. |
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