Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application

In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensi...

Full description

Saved in:
Bibliographic Details
Main Authors: Hussin, M. R. M., Ismail, Razali, Syono, Ismahadi
Format: Article
Published: 2012
Subjects:
Online Access:http://eprints.utm.my/id/eprint/47503/
http://dx.doi.org/10.1007/978-3-642-35264-5_53
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia
Description
Summary:In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensing membrane is deposited on the other end extended from the metal/polysilicon gate. This type of ion sensor is suitable for in vivo and in vitro measurement, especially for biosensor applications. Basic concept, fabrication techniques and process/device characterization of EGFET for biosensor development will be discussed in this paper. To support the fabrication process, a simulation study of the process flow using the CoventorWare simulator and the Silvaco Athena process simulator has been done. The results showed good current-voltage characteristics of a multi-finger structure transistor suitable to be used for biosensor transducer.