Simulation and fabrication of extended gate ion sensitive field effect transistor for biosensor application

In this paper, we present the Extended Gate Ion Sensitive Field Effect Transistor (EGFET) which has a same function as the Ion Sensitive Field Effect Transistor (ISFET). In contrast to the traditional ISFET, the EGFET retains the original metal/polysilicon portion of the gate electrode and the sensi...

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Bibliographic Details
Main Authors: Hussin, M. R. M., Ismail, Razali, Syono, Ismahadi
Format: Article
Published: 2012
Subjects:
Online Access:http://eprints.utm.my/id/eprint/47503/
http://dx.doi.org/10.1007/978-3-642-35264-5_53
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Institution: Universiti Teknologi Malaysia
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