A review of graphene based field effect transistor architecture and channel geometry

A review of graphene based field effect transistor architecture and channel geometry

The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...

Full description

Saved in:
Bibliographic Details
Main Authors: Johari, Zaharah, Ismail, Razali
Format: Article
Published: American Scientific Publishers 2015
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/55897/
http://dx.doi.org/10.1166/sam.2015.2266
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia
id my.utm.55897
record_format eprints
spelling my.utm.558972017-08-25T06:24:07Z http://eprints.utm.my/id/eprint/55897/ A review of graphene based field effect transistor architecture and channel geometry Johari, Zaharah Ismail, Razali QC Physics The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its physical limits. It becomes more challenging when the device applications are more specialized. Therefore, new device structures and the implementation of advanced materials such as graphene are necessary. Graphene is one of the materials that has been listed in International Technology Roadmap Semiconductor (ITRS) to overcome the device scaling need as the conventional silicon material reaches its ultimate limit. In this article, existing issues pertaining to graphene are reviewed. These include the electrical performance of graphene-based Field Effect Transistor (FET) using various architectures and different geometries of graphene conducting channel. American Scientific Publishers 2015-10 Article PeerReviewed Johari, Zaharah and Ismail, Razali (2015) A review of graphene based field effect transistor architecture and channel geometry. Science of Advanced Materials, 7 (10). pp. 2011-2020. ISSN 1947-2935 http://dx.doi.org/10.1166/sam.2015.2266 DOI:10.1166/sam.2015.2266
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Johari, Zaharah
Ismail, Razali
A review of graphene based field effect transistor architecture and channel geometry
description The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its physical limits. It becomes more challenging when the device applications are more specialized. Therefore, new device structures and the implementation of advanced materials such as graphene are necessary. Graphene is one of the materials that has been listed in International Technology Roadmap Semiconductor (ITRS) to overcome the device scaling need as the conventional silicon material reaches its ultimate limit. In this article, existing issues pertaining to graphene are reviewed. These include the electrical performance of graphene-based Field Effect Transistor (FET) using various architectures and different geometries of graphene conducting channel.
format Article
author Johari, Zaharah
Ismail, Razali
author_facet Johari, Zaharah
Ismail, Razali
author_sort Johari, Zaharah
title A review of graphene based field effect transistor architecture and channel geometry
title_short A review of graphene based field effect transistor architecture and channel geometry
title_full A review of graphene based field effect transistor architecture and channel geometry
title_fullStr A review of graphene based field effect transistor architecture and channel geometry
title_full_unstemmed A review of graphene based field effect transistor architecture and channel geometry
title_sort review of graphene based field effect transistor architecture and channel geometry
publisher American Scientific Publishers
publishDate 2015
url http://eprints.utm.my/id/eprint/55897/
http://dx.doi.org/10.1166/sam.2015.2266
_version_ 1643653933915176960

Similar Items