A review of graphene based field effect transistor architecture and channel geometry
The aggressive scaling of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in nanometer scale promises low-power consumption, low energy delay product, high density as well as high processor speed. However, this phenomenon leads to short channel effects when the scaling approaches its phys...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Published: |
American Scientific Publishers
2015
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/55897/ http://dx.doi.org/10.1166/sam.2015.2266 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Teknologi Malaysia |