Modelling of nanoscale MOSFET performance in the velocity saturation region
Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a funct...
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| المؤلفون الرئيسيون: | , |
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| التنسيق: | مقال |
| اللغة: | English English |
| منشور في: |
Faculty of Electrical Engineering
2007
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf http://eprints.utm.my/id/eprint/8071/3/paper7june07_michael_tan.pdf http://eprints.utm.my/id/eprint/8071/ |
| الوسوم: |
إضافة وسم
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| المؤسسة: | Universiti Teknologi Malaysia |
| اللغة: | English English |
| الملخص: | Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology. |
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