Modelling of nanoscale MOSFET performance in the velocity saturation region

• Main Authors: Tan, Micheal Loong Peng, Ismail, Razali
• Format: Article
• Language: English; English
• Published: Faculty of Electrical Engineering 2007
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/8071/1/RazaliIsmail2007_ModelingofNanoscaleMOSFETPerformance.pdf; http://eprints.utm.my/id/eprint/8071/3/paper7june07_michael_tan.pdf; http://eprints.utm.my/id/eprint/8071/
• Institution: Universiti Teknologi Malaysia

Velocity saturation as a function of temperature and drain voltage for n-channel MOSFET is investigated. The combination of an existing current-voltage (I-V) model, drain source resistance model and a more precise mobility derivation gives an accurate representation of velocity saturation as a function of the above parameters. A simplified threshold voltage formulation is developed to provide similar accuracy when compared to actual devices. The models show good agreement with the experimental data over a wide range of gate and drain bias for 90nm process technology.