Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel
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my.utm.835352019-10-16T03:42:18Z http://eprints.utm.my/id/eprint/83535/ Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel Alias, Nurul Ezaila Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering 2018 Conference or Workshop Item PeerReviewed Alias, Nurul Ezaila and Ismail, Razali (2018) Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel. In: IEEE Student Conference on Research and Development (SCORED 2018). |
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TK Electrical engineering. Electronics Nuclear engineering |
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TK Electrical engineering. Electronics Nuclear engineering Alias, Nurul Ezaila Ismail, Razali Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
format |
Conference or Workshop Item |
author |
Alias, Nurul Ezaila Ismail, Razali |
author_facet |
Alias, Nurul Ezaila Ismail, Razali |
author_sort |
Alias, Nurul Ezaila |
title |
Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
title_short |
Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
title_full |
Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
title_fullStr |
Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
title_full_unstemmed |
Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
title_sort |
graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel |
publishDate |
2018 |
url |
http://eprints.utm.my/id/eprint/83535/ |
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1651866717490511872 |