Graphene as charge storage layer in floating gate flash memory: comparison between n-channel and p-channel

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Bibliographic Details
Main Authors:	Alias, Nurul Ezaila, Ismail, Razali
Format:	Conference or Workshop Item
Published:	2018
Subjects:	TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/83535/
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Institution:	Universiti Teknologi Malaysia

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