An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices

Love mode surface acoustic wave (SAW) devices are very useful for sensing in liquid environments. Earlier work on such devices mainly made use of zinc oxide (ZnO) thin films on silicon (Si) or silicon dioxide (SiO2). However, using them for sensing still required protection from contamination from z...

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Main Authors: Aslam, M.Z., Jeoti, V., Manzoor, S., Hanif, M., Junaid, M.
Format: Article
Published: IOP Publishing Ltd 2020
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85092435701&doi=10.1088%2f1361-6641%2fabadbb&partnerID=40&md5=6f90b49b519fed4098a1543858cf8079
http://eprints.utp.edu.my/29778/
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spelling my.utp.eprints.297782022-03-25T02:51:02Z An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices Aslam, M.Z. Jeoti, V. Manzoor, S. Hanif, M. Junaid, M. Love mode surface acoustic wave (SAW) devices are very useful for sensing in liquid environments. Earlier work on such devices mainly made use of zinc oxide (ZnO) thin films on silicon (Si) or silicon dioxide (SiO2). However, using them for sensing still required protection from contamination from zinc (Zn) in the form of some additional passivation layer. In this work, the objective has been to study an aluminium nitride (AlN)-based multilayer structure that is able to generate SAW Love modes very efficiently. A layer of SiO2 on top of the AlN layer does the trick. A 3D finite element method simulation analysis of the proposed structure (SiO2 /AlN (11¯20) /SiO2 /Si (100)) is accordingly performed, and phase velocities, electromechanical coupling coefficients and frequency shift due to mass loading are simulated as a function of the normalized thicknesses of AlN and SiO2 films. It is shown that the optimal normalized thickness identified to be hs2 /λ = 0.18, hAlN /λ = 0.45 with AlN c-axis orientation of 30o, and the maximum value of the electromechanical coupling coefficient k2 = 0.58 can be achieved. Even though the value of k2 is comparable to ZnO-based Love mode devices, the phase velocity is 1.5 times higher (5530 m s�1 compared to 3652 m s�1). Equally importantly, it is seen that the frequency shift due to mass loading of deionized water (the AlN-based multilayer Love mode sensor) is much higher for that using the ZnO-based multilayer Love mode sensor. © 2020 IOP Publishing Ltd Printed in the UK IOP Publishing Ltd 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85092435701&doi=10.1088%2f1361-6641%2fabadbb&partnerID=40&md5=6f90b49b519fed4098a1543858cf8079 Aslam, M.Z. and Jeoti, V. and Manzoor, S. and Hanif, M. and Junaid, M. (2020) An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices. Semiconductor Science and Technology, 35 (11). http://eprints.utp.edu.my/29778/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description Love mode surface acoustic wave (SAW) devices are very useful for sensing in liquid environments. Earlier work on such devices mainly made use of zinc oxide (ZnO) thin films on silicon (Si) or silicon dioxide (SiO2). However, using them for sensing still required protection from contamination from zinc (Zn) in the form of some additional passivation layer. In this work, the objective has been to study an aluminium nitride (AlN)-based multilayer structure that is able to generate SAW Love modes very efficiently. A layer of SiO2 on top of the AlN layer does the trick. A 3D finite element method simulation analysis of the proposed structure (SiO2 /AlN (11¯20) /SiO2 /Si (100)) is accordingly performed, and phase velocities, electromechanical coupling coefficients and frequency shift due to mass loading are simulated as a function of the normalized thicknesses of AlN and SiO2 films. It is shown that the optimal normalized thickness identified to be hs2 /λ = 0.18, hAlN /λ = 0.45 with AlN c-axis orientation of 30o, and the maximum value of the electromechanical coupling coefficient k2 = 0.58 can be achieved. Even though the value of k2 is comparable to ZnO-based Love mode devices, the phase velocity is 1.5 times higher (5530 m s�1 compared to 3652 m s�1). Equally importantly, it is seen that the frequency shift due to mass loading of deionized water (the AlN-based multilayer Love mode sensor) is much higher for that using the ZnO-based multilayer Love mode sensor. © 2020 IOP Publishing Ltd Printed in the UK
format Article
author Aslam, M.Z.
Jeoti, V.
Manzoor, S.
Hanif, M.
Junaid, M.
spellingShingle Aslam, M.Z.
Jeoti, V.
Manzoor, S.
Hanif, M.
Junaid, M.
An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
author_facet Aslam, M.Z.
Jeoti, V.
Manzoor, S.
Hanif, M.
Junaid, M.
author_sort Aslam, M.Z.
title An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
title_short An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
title_full An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
title_fullStr An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
title_full_unstemmed An aluminium nitride based multilayer structure for Love mode surface acoustic wave devices
title_sort aluminium nitride based multilayer structure for love mode surface acoustic wave devices
publisher IOP Publishing Ltd
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85092435701&doi=10.1088%2f1361-6641%2fabadbb&partnerID=40&md5=6f90b49b519fed4098a1543858cf8079
http://eprints.utp.edu.my/29778/
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