A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical a...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
2007
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/886/1/Small_2007.PDF http://eprints.utp.edu.my/886/ |
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| Institution: | Universiti Teknologi Petronas |
| Summary: | Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned. |
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