A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist

Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical a...

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Main Authors: Gibbons, Francis, Mohd Zaid, Hasnah, Robinson, A.P.G.
Format: Article
Published: 2007
Subjects:
QC Physics
Online Access:http://eprints.utp.edu.my/886/1/Small_2007.PDF
http://eprints.utp.edu.my/886/
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Institution: Universiti Teknologi Petronas
id my.utp.eprints.886
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spelling my.utp.eprints.8862017-01-19T08:26:51Z A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist Gibbons, Francis Mohd Zaid, Hasnah Robinson, A.P.G. QC Physics Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned. 2007-11-15 Article PeerReviewed application/pdf http://eprints.utp.edu.my/886/1/Small_2007.PDF Gibbons, Francis and Mohd Zaid, Hasnah and Robinson, A.P.G. (2007) A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist. Small, 3 (12). pp. 2076-2080. http://eprints.utp.edu.my/886/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
topic QC Physics
spellingShingle QC Physics
Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
description Current lithographic resists depend on large polymeric materials, which are starting to limit further improvements in line-width roughness and feature size. Fullerene molecular resists use much smaller molecules to avoid this problem. However, such resists have poor radiation sensitivity. Chemical amplification of a fullerene derivative using an epoxy crosslinker and a photoacid generator is demonstrated. The sensitivity of the material is increased by two orders of magnitude, and 20-nm line widths are patterned.
format Article
author Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
author_facet Gibbons, Francis
Mohd Zaid, Hasnah
Robinson, A.P.G.
author_sort Gibbons, Francis
title A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_short A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_full A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_fullStr A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_full_unstemmed A Chemically Amplified Fullerene-Derivative Molecular Electron-Beam Resist
title_sort chemically amplified fullerene-derivative molecular electron-beam resist
publishDate 2007
url http://eprints.utp.edu.my/886/1/Small_2007.PDF
http://eprints.utp.edu.my/886/
_version_ 1738655099550433280

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