The Mobilities of Carriers Confined in a Single-side Doped Square Quantum Wells Dependence on Temperature
A theory is given of the mobility of a two-dimensional electron gas at high temperature in single-side square quantum wells. Within the variational approach, we obtain analytic expressions for the carrier distribution, and autocorrelation functions for various scattering mechanisms. We examine the d...
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| 格式: | Article |
| 語言: | English |
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H. : ĐHQGHN
2017
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| 在線閱讀: | http://repository.vnu.edu.vn/handle/VNU_123/55379 |
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| 機構: | Vietnam National University, Hanoi |
| 語言: | English |