Oxide charge evolution under crystallization of amorphous LieNbeO films
LieNbeO amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment and an Ar(60%)þO2(40%) gas mixture. A positive effective fixed oxide charge Qeff having negative, -Qeff, and positive, þQeff, components, exists in the as-grown heteros...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
H. : ĐHQGHN
2020
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| Subjects: | |
| Online Access: | http://repository.vnu.edu.vn/handle/VNU_123/89313 https://doi.org/10.1016/j.jsamd.2020.02.006 |
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| Institution: | Vietnam National University, Hanoi |
| Language: | English |
| Summary: | LieNbeO amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering
method in an Ar environment and an Ar(60%)þO2(40%) gas mixture. A positive effective fixed
oxide charge Qeff having negative, -Qeff, and positive, þQeff, components, exists in the as-grown heterostructures.
-Qeff is located near the substrate/film interface, whereas þ Qeff is determined by a deficit of
Li and O (vacancies) in the bulk of LieNbeO films. As-grown films crystallized under thermal annealing
(TA) at temperatures up to 600 C and revealed the formation of polycrystalline LiNbO3. TA at about
520 C resulted in the formation of the second phase LiNb3O8, increasing þ Qeff, and compensating -Qeff
entirely. The dielectric constants of the as-grown films exhibit two peaks at the annealing temperatures
of 450 C and 550 C, which are attributed to the total crystallization and recrystallization of the LN films
under TA, respectively. |
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