Terahertz emission enhancement in InAs thin films using silicon lens coupler

Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of...

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Main Authors: Que, Christopher T., Edamura, Tadataka, Nakajima, Makoto, Tani, Masahiko, Hangyo, Masanori
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Published: Animo Repository 2011
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Online Access:https://animorepository.dlsu.edu.ph/faculty_research/11911
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Institution: De La Salle University
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spelling oai:animorepository.dlsu.edu.ph:faculty_research-143652024-05-16T06:39:11Z Terahertz emission enhancement in InAs thin films using silicon lens coupler Que, Christopher T. Edamura, Tadataka Nakajima, Makoto Tani, Masahiko Hangyo, Masanori Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space. 2011-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/11911 info:doi/10.1143/JJAP.50.080207 Faculty Research Work Animo Repository Terahertz technology Thin films—Optical properties Indium arsenide Optics Semiconductor and Optical Materials
institution De La Salle University
building De La Salle University Library
continent Asia
country Philippines
Philippines
content_provider De La Salle University Library
collection DLSU Institutional Repository
topic Terahertz technology
Thin films—Optical properties
Indium arsenide
Optics
Semiconductor and Optical Materials
spellingShingle Terahertz technology
Thin films—Optical properties
Indium arsenide
Optics
Semiconductor and Optical Materials
Que, Christopher T.
Edamura, Tadataka
Nakajima, Makoto
Tani, Masahiko
Hangyo, Masanori
Terahertz emission enhancement in InAs thin films using silicon lens coupler
description Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space.
format text
author Que, Christopher T.
Edamura, Tadataka
Nakajima, Makoto
Tani, Masahiko
Hangyo, Masanori
author_facet Que, Christopher T.
Edamura, Tadataka
Nakajima, Makoto
Tani, Masahiko
Hangyo, Masanori
author_sort Que, Christopher T.
title Terahertz emission enhancement in InAs thin films using silicon lens coupler
title_short Terahertz emission enhancement in InAs thin films using silicon lens coupler
title_full Terahertz emission enhancement in InAs thin films using silicon lens coupler
title_fullStr Terahertz emission enhancement in InAs thin films using silicon lens coupler
title_full_unstemmed Terahertz emission enhancement in InAs thin films using silicon lens coupler
title_sort terahertz emission enhancement in inas thin films using silicon lens coupler
publisher Animo Repository
publishDate 2011
url https://animorepository.dlsu.edu.ph/faculty_research/11911
_version_ 1800918856373370880