Terahertz emission enhancement in InAs thin films using silicon lens coupler
Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of...
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2011
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oai:animorepository.dlsu.edu.ph:faculty_research-143652024-05-16T06:39:11Z Terahertz emission enhancement in InAs thin films using silicon lens coupler Que, Christopher T. Edamura, Tadataka Nakajima, Makoto Tani, Masahiko Hangyo, Masanori Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space. 2011-01-01T08:00:00Z text https://animorepository.dlsu.edu.ph/faculty_research/11911 info:doi/10.1143/JJAP.50.080207 Faculty Research Work Animo Repository Terahertz technology Thin films—Optical properties Indium arsenide Optics Semiconductor and Optical Materials |
| institution |
De La Salle University |
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De La Salle University Library |
| continent |
Asia |
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Philippines Philippines |
| content_provider |
De La Salle University Library |
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DLSU Institutional Repository |
| topic |
Terahertz technology Thin films—Optical properties Indium arsenide Optics Semiconductor and Optical Materials |
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Terahertz technology Thin films—Optical properties Indium arsenide Optics Semiconductor and Optical Materials Que, Christopher T. Edamura, Tadataka Nakajima, Makoto Tani, Masahiko Hangyo, Masanori Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| description |
Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space. |
| format |
text |
| author |
Que, Christopher T. Edamura, Tadataka Nakajima, Makoto Tani, Masahiko Hangyo, Masanori |
| author_facet |
Que, Christopher T. Edamura, Tadataka Nakajima, Makoto Tani, Masahiko Hangyo, Masanori |
| author_sort |
Que, Christopher T. |
| title |
Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| title_short |
Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| title_full |
Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| title_fullStr |
Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| title_full_unstemmed |
Terahertz emission enhancement in InAs thin films using silicon lens coupler |
| title_sort |
terahertz emission enhancement in inas thin films using silicon lens coupler |
| publisher |
Animo Repository |
| publishDate |
2011 |
| url |
https://animorepository.dlsu.edu.ph/faculty_research/11911 |
| _version_ |
1800918856373370880 |