Terahertz emission enhancement in InAs thin films using silicon lens coupler

• المؤلفون الرئيسيون: Que, Christopher T., Edamura, Tadataka, Nakajima, Makoto, Tani, Masahiko, Hangyo, Masanori
• التنسيق: text
• منشور في: Animo Repository 2011
• الموضوعات: Terahertz technology; Thin films—Optical properties; Indium arsenide; Optics; Semiconductor and Optical Materials
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/11911
• المؤسسة: De La Salle University

Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of...