Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

• المؤلفون الرئيسيون: Sadia, Cyril P., Laganapan, Aleena Maria, Tumanguil, Mae Agatha, Estacio, Elmer, Somintac, Armando, Salvador, Arnel A., Que, Christopher T., Yamamoto, Kohji, Tani, Masahiko
• التنسيق: text
• منشور في: Animo Repository 2012
• الموضوعات: Gallium arsenide; Indium arsenide; Molecular beam epitaxy; Scanning electron microscopy; Electric fields; Physics
• الوصول للمادة أونلاين: https://animorepository.dlsu.edu.ph/faculty_research/3744; https://animorepository.dlsu.edu.ph/context/faculty_research/article/4746/type/native/viewcontent/1.4770267
• المؤسسة: De La Salle University

Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown b...