Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)
Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown b...
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| Main Authors: | , , , , , , , , |
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| Format: | text |
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Animo Repository
2012
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/3744 https://animorepository.dlsu.edu.ph/context/faculty_research/article/4746/type/native/viewcontent/1.4770267 |
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| Institution: | De La Salle University |