Reactive ion etching of transition-metal alloys
For production of advanced spin-electronic devices, such as a magnetic random access memory with the higher-density memory cell, a reactive ion etching (RIE) process of transition metal alloys is the indispensable component of development, while no transition-metal compounds with the relatively high...
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| Main Authors: | , , , |
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| Format: | text |
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Animo Repository
2006
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| Subjects: | |
| Online Access: | https://animorepository.dlsu.edu.ph/faculty_research/4563 |
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| Institution: | De La Salle University |
| Summary: | For production of advanced spin-electronic devices, such as a magnetic random access memory with the higher-density memory cell, a reactive ion etching (RIE) process of transition metal alloys is the indispensable component of development, while no transition-metal compounds with the relatively high vapor pressure have been founded so far. Here, we show the RIE process of a NiFe thin film by using CH4:O2:NH3 discharge. The RIE process was designed by ab initio calculations, and the present result is the first successful demonstration of the chemical effect in the RIE process for transition-metal alloys. The relative etching ratio of NiFe against Ti as the metal mask was decreased by substituting CH4 with CHF3. |
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