Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

• Main Authors: Duan, T. L., Pan, J. S., Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100139; http://hdl.handle.net/10220/10961
• Institution: Nanyang Technological University

The interface region between Ga-face n-type GaN and Al2O3 dielectric (achieved via atomic-layer deposition or ALD) is investigated by X-ray photoelectron spectroscopy (XPS). An increase in the Ga-O to Ga-N bond intensity ratio following Al2O3 deposition implies that the growth of an interfacial gall...