CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design

• Main Authors: George, Arup K., Chan, Wai Pan, Narducci, Margarita Sofia, Kong, Zhi Hui, Je, Minkyu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100181; http://hdl.handle.net/10220/13608
• Institution: Nanyang Technological University

Low-frequency variation of intracranial pressure (ICP) is a key indicator determining the successful outcome of a patient, subjected to traumatic brain injury (TBI). Post-trauma ICP increase can lead to fatal secondary injuries and hence continuous ICP monitoring would be an essential modality requi...