CMOS-MEMS capacitive sensors for intra-cranial pressure monitoring : sensor fabrication & system design

• المؤلفون الرئيسيون: George, Arup K., Chan, Wai Pan, Narducci, Margarita Sofia, Kong, Zhi Hui, Je, Minkyu
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100181; http://hdl.handle.net/10220/13608

Low-frequency variation of intracranial pressure (ICP) is a key indicator determining the successful outcome of a patient, subjected to traumatic brain injury (TBI). Post-trauma ICP increase can lead to fatal secondary injuries and hence continuous ICP monitoring would be an essential modality requi...