Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots

• Main Authors: Xu, S. J., Wang, X. C., Chua, S. J., Wang, C. H., Fan, Weijun, Jiang, J., Xie, X. G.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: Electrical and Electronic Engineering
• Online Access: https://hdl.handle.net/10356/100261; http://hdl.handle.net/10220/17876
• Institution: Nanyang Technological University

Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dotsgrown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing of the luminescencelinewidth (from 78.9 to 20.5 meV) from the InAs dot layer o...