Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing

• المؤلفون الرئيسيون: Wang, X. C., Xu, S. J., Chua, S. J., Zhang, Zi-Hui, Fan, Weijun, Wang, C. H., Jiang, J., Xie, X. G.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/99690; http://hdl.handle.net/10220/18011
• المؤسسة: Nanyang Technological University

In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground stat...