Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing

In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground stat...

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Main Authors: Wang, X. C., Xu, S. J., Chua, S. J., Zhang, Zi-Hui, Fan, Weijun, Wang, C. H., Jiang, J., Xie, X. G.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99690
http://hdl.handle.net/10220/18011
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-996902020-03-07T14:00:31Z Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing Wang, X. C. Xu, S. J. Chua, S. J. Zhang, Zi-Hui Fan, Weijun Wang, C. H. Jiang, J. Xie, X. G. School of Electrical and Electronic Engineering Department of Electrical Engineering, Centre for Optoelectronics, National University of Singapore Department of Electrical Engineering, Centre for Optoelectronics, National University of Singapore Institute of Materials Research and Engineering, National University of Singapore MBE Technology Pte. Ltd., Singapore DRNTU::Engineering::Electrical and electronic engineering In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows the ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembledQDs. Published version 2013-12-04T03:40:56Z 2019-12-06T20:10:24Z 2013-12-04T03:40:56Z 2019-12-06T20:10:24Z 1999 1999 Journal Article Wang, X. C., Xu, S. J., Chua, S. J., Zhang, Z.-H., Fan, W., Wang, C. H., Jiang, J., & Xie, X. G. (1999). Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing. Journal of applied physics, 86(5), 2687. 0021-8979 https://hdl.handle.net/10356/99690 http://hdl.handle.net/10220/18011 10.1063/1.371111 en Journal of applied physics © 1999 American Institute of Physics. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.371111].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 4 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Wang, X. C.
Xu, S. J.
Chua, S. J.
Zhang, Zi-Hui
Fan, Weijun
Wang, C. H.
Jiang, J.
Xie, X. G.
Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
description In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows the ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembledQDs.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wang, X. C.
Xu, S. J.
Chua, S. J.
Zhang, Zi-Hui
Fan, Weijun
Wang, C. H.
Jiang, J.
Xie, X. G.
format Article
author Wang, X. C.
Xu, S. J.
Chua, S. J.
Zhang, Zi-Hui
Fan, Weijun
Wang, C. H.
Jiang, J.
Xie, X. G.
author_sort Wang, X. C.
title Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
title_short Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
title_full Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
title_fullStr Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
title_full_unstemmed Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
title_sort widely tunable intersubband energy spacing of self-assembled inas/gaas quantum dots due to interface intermixing
publishDate 2013
url https://hdl.handle.net/10356/99690
http://hdl.handle.net/10220/18011
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