Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing

• Main Authors: Wang, X. C., Xu, S. J., Chua, S. J., Zhang, Zi-Hui, Fan, Weijun, Wang, C. H., Jiang, J., Xie, X. G.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/99690; http://hdl.handle.net/10220/18011
• Institution: Nanyang Technological University

In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots(QDs) due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescencelinewidth of the ground stat...