Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high...

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Main Authors: Ng, T. K., Yoon, Soon Fatt, Wang, S. Z., Loke, Wan Khai, Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/100399
http://hdl.handle.net/10220/18004
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1003992020-03-07T14:00:34Z Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature Ng, T. K. Yoon, Soon Fatt Wang, S. Z. Loke, Wan Khai Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high temperature (840 °C) and long duration (10min) results in significant improvements to the PL characteristics of the GaInNAs QWs. The shift of the GaInNAs and GaInAs PL peak wavelength resulting from high-temperature annealing is dependent on the In composition. It is suggested that the dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs with high-In composition are residual-strain-induced GaAs/ GaInNAs/GaAs interface interdiffusion, and defect-assisted diffusion-related effects, both of which originate from the growth process. Published version 2013-12-04T02:04:38Z 2019-12-06T20:21:49Z 2013-12-04T02:04:38Z 2019-12-06T20:21:49Z 2002 2002 Journal Article Ng, T. K., Yoon, S. F., Wang, S. Z., Loke, W. K., & Fan, W. (2002). Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature. Journal of vacuum science & technology B : Microelectronics and nanometer structures, 20(3), 964. 0734-211X https://hdl.handle.net/10356/100399 http://hdl.handle.net/10220/18004 10.1116/1.1477425 en Journal of vacuum science & technology B : Microelectronics and nanometer structures © 2002 American Vacuum Society. This paper was published in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures and is made available as an electronic reprint (preprint) with permission of American Vacuum Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1116/1.1477425].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 5 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Ng, T. K.
Yoon, Soon Fatt
Wang, S. Z.
Loke, Wan Khai
Fan, Weijun
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
description The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high temperature (840 °C) and long duration (10min) results in significant improvements to the PL characteristics of the GaInNAs QWs. The shift of the GaInNAs and GaInAs PL peak wavelength resulting from high-temperature annealing is dependent on the In composition. It is suggested that the dominant mechanisms that give rise to the blueshift of the PL peak wavelength in GaInNAs QWs with high-In composition are residual-strain-induced GaAs/ GaInNAs/GaAs interface interdiffusion, and defect-assisted diffusion-related effects, both of which originate from the growth process.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Ng, T. K.
Yoon, Soon Fatt
Wang, S. Z.
Loke, Wan Khai
Fan, Weijun
format Article
author Ng, T. K.
Yoon, Soon Fatt
Wang, S. Z.
Loke, Wan Khai
Fan, Weijun
author_sort Ng, T. K.
title Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
title_short Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
title_full Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
title_fullStr Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
title_full_unstemmed Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
title_sort photoluminescence characteristics of gainnas quantum wells annealed at high temperature
publishDate 2013
url https://hdl.handle.net/10356/100399
http://hdl.handle.net/10220/18004
_version_ 1681046593189445632