Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

• Main Authors: Ng, T. K., Yoon, Soon Fatt, Wang, S. Z., Loke, Wan Khai, Fan, Weijun
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/100399; http://hdl.handle.net/10220/18004
• 機構: Nanyang Technological University

The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high...