Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature

• المؤلفون الرئيسيون: Ng, T. K., Yoon, Soon Fatt, Wang, S. Z., Loke, Wan Khai, Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100399; http://hdl.handle.net/10220/18004

The photoluminescence (PL) characteristics of GaInNAs quantum wells (QWs) after high-temperature postgrowth annealing were studied. The QWs were grown using a radio-frequency nitrogen plasma source in conjunction with a solid-source molecular-beam epitaxy system. It was found that annealing at high...