Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

• المؤلفون الرئيسيون: Loke, Wan Khai, Yoon, Soon Fatt, Ng, T. K., Wang, S. Z., Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100502; http://hdl.handle.net/10220/17861
• المؤسسة: Nanyang Technological University

We present the effect of nitrogen (N) and indium (In) incorporation on the structural and optical properties of with low lattice mismatch to GaAs grown by solid-source molecular beam epitaxy using a radio frequency (rf) nitrogen plasma source. The results show that excessive introduction of nitroge...