Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models

• المؤلفون الرئيسيون: Ng, S., Dang, Y., Yoon, S., Fan, Weijun
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100595; http://hdl.handle.net/10220/18006

We have investigated the electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy /GaAs quantum well (QW) using 10-band, 8-band and 6-band k·p models. The transition energy calculated by the 8-band model agrees very well with the values calculated by the 10-band model, especi...