Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models
We have investigated the electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy /GaAs quantum well (QW) using 10-band, 8-band and 6-band k·p models. The transition energy calculated by the 8-band model agrees very well with the values calculated by the 10-band model, especi...
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Main Authors: | Ng, S., Dang, Y., Yoon, S., Fan, Weijun |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100595 http://hdl.handle.net/10220/18006 |
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Institution: | Nanyang Technological University |
Language: | English |
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