Rashba plasmon polaritons in semiconductor heterostructures

• المؤلفون الرئيسيون: Kaliteevski, M. A., Savenko, I. G., Iorsh, I. V., Kovalev, V. M.
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الموضوعات: DRNTU::Science::Physics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100609; http://hdl.handle.net/10220/18647
• المؤسسة: Nanyang Technological University

We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed.