Rashba plasmon polaritons in semiconductor heterostructures
We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maxim...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100609 http://hdl.handle.net/10220/18647 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed. |
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