Rashba plasmon polaritons in semiconductor heterostructures
We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maxim...
Saved in:
| Main Authors: | , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100609 http://hdl.handle.net/10220/18647 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |
| id |
sg-ntu-dr.10356-100609 |
|---|---|
| record_format |
dspace |
| spelling |
sg-ntu-dr.10356-1006092023-02-28T19:41:05Z Rashba plasmon polaritons in semiconductor heterostructures Kaliteevski, M. A. Savenko, I. G. Iorsh, I. V. Kovalev, V. M. School of Physical and Mathematical Sciences DRNTU::Science::Physics We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed. Published version 2014-01-21T06:41:40Z 2019-12-06T20:25:19Z 2014-01-21T06:41:40Z 2019-12-06T20:25:19Z 2013 2013 Journal Article Iorsh, I. V., Kovalev, V. M., Kaliteevski, M. A., & Savenko, I. G. (2013). Rashba plasmon polaritons in semiconductor heterostructures. Applied physics letters, 102(10), 101105-. 0003-6951 https://hdl.handle.net/10356/100609 http://hdl.handle.net/10220/18647 10.1063/1.4794847 en Applied physics letters © 2013 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4794847]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Science::Physics |
| spellingShingle |
DRNTU::Science::Physics Kaliteevski, M. A. Savenko, I. G. Iorsh, I. V. Kovalev, V. M. Rashba plasmon polaritons in semiconductor heterostructures |
| description |
We propose a concept of surface plasmon-polariton amplification in the structure comprising interface between dielectric, metal, and asymmetric quantum well. Due to the Rashba spin-orbit interaction, minima of dispersion relation for electrons in conduction band are shifted with respect to the maximum of dispersion dependence for holes in Γ-point. When energy and momentum intervals between extrema in dispersion relations of electrons and holes match dispersion relation of plasmons, indirect radiative transition can amplify the plasmons; excitation of leaky modes is forbidden due to the selection rules. Efficiency of the indirect radiative transition is calculated and design of the structure is analysed. |
| author2 |
School of Physical and Mathematical Sciences |
| author_facet |
School of Physical and Mathematical Sciences Kaliteevski, M. A. Savenko, I. G. Iorsh, I. V. Kovalev, V. M. |
| format |
Article |
| author |
Kaliteevski, M. A. Savenko, I. G. Iorsh, I. V. Kovalev, V. M. |
| author_sort |
Kaliteevski, M. A. |
| title |
Rashba plasmon polaritons in semiconductor heterostructures |
| title_short |
Rashba plasmon polaritons in semiconductor heterostructures |
| title_full |
Rashba plasmon polaritons in semiconductor heterostructures |
| title_fullStr |
Rashba plasmon polaritons in semiconductor heterostructures |
| title_full_unstemmed |
Rashba plasmon polaritons in semiconductor heterostructures |
| title_sort |
rashba plasmon polaritons in semiconductor heterostructures |
| publishDate |
2014 |
| url |
https://hdl.handle.net/10356/100609 http://hdl.handle.net/10220/18647 |
| _version_ |
1759856346020184064 |