Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

• Main Authors: Ding, Y., Ma, B. S., Xu, D. W., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T., Nakwaski, W., Fan, Weijun, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100797; http://hdl.handle.net/10220/18171
• Institution: Nanyang Technological University

Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission...