Microphotoluminescence investigation of InAs quantum dot active region in 1.3 μm vertical cavity surface emitting laser structure

• المؤلفون الرئيسيون: Ding, Y., Ma, B. S., Xu, D. W., Liang, S., Zhao, L. J., Wasiak, M., Czyszanowski, T., Nakwaski, W., Fan, Weijun, Yoon, Soon Fatt
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100797; http://hdl.handle.net/10220/18171
• المؤسسة: Nanyang Technological University

Microphotoluminescence -PL investigation has been performed at room temperature on InAs quantum dot QD vertical cavity surface emitting laser VCSEL structure in order to characterize the QD epitaxial structure which was designed for 1.3 m wave band emission. Actual and precise QD emission...