Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection
The n-type InGaAs/AlxGa1−xAs quantum well infrared photodetector QWIP with asymmetric graded barriers for broadband detection has been investigated theoretically based on the eight-band k·p model. It is found that the intersubband transitions from the ground state to all bound and continuum exc...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100806 http://hdl.handle.net/10220/18166 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The n-type InGaAs/AlxGa1−xAs quantum well infrared photodetector QWIP with asymmetric
graded barriers for broadband detection has been investigated theoretically based on the eight-band
k·p model. It is found that the intersubband transitions from the ground state to all bound and
continuum excited states contribute to the overall absorption and the bound-to-continuum B-to-C
transitions dominate. The superposition of the bound-to-bound and B-to-C transitions results in a
broad detection bandwidth, and both the detected wavelength and bandwidth can be tuned by the
applied voltage. The analysis method is also applicable to the GaAs/ InxGa1−xAs/ InyGa1−yAs QWIP
with step quantum wells. The calculated results are consistent with the reported experimental
observations. |
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