Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

• المؤلفون الرئيسيون: Ng, T. K., Yoon, Soon Fatt, Fan, Weijun, Loke, Wan Khai, Wang, S. Z., Ng, S. T.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100830; http://hdl.handle.net/10220/17959

The photoluminescence (PL) quenching characteristics of a thermal-annealed ~7 nm GaInNAs/ GaAs quantum well (QW) with In=30% and N=1.5% were studied from 4 to 150 K. It is found that the integrated PL intensity versus temperature characteristic can be well fitted by a double activation energy model....