Photoluminescence quenching mechanisms in GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy
The photoluminescence (PL) quenching characteristics of a thermal-annealed ~7 nm GaInNAs/ GaAs quantum well (QW) with In=30% and N=1.5% were studied from 4 to 150 K. It is found that the integrated PL intensity versus temperature characteristic can be well fitted by a double activation energy model....
محفوظ في:
المؤلفون الرئيسيون: | Ng, T. K., Yoon, Soon Fatt, Fan, Weijun, Loke, Wan Khai, Wang, S. Z., Ng, S. T. |
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مؤلفون آخرون: | School of Electrical and Electronic Engineering |
التنسيق: | مقال |
اللغة: | English |
منشور في: |
2013
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الموضوعات: | |
الوصول للمادة أونلاين: | https://hdl.handle.net/10356/100830 http://hdl.handle.net/10220/17959 |
الوسوم: |
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مواد مشابهة
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Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy
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منشور في: (2013) -
Photoluminescence characteristics of GaInNAs quantum wells annealed at high temperature
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Molecular beam epitaxial growth of GaNAs and GaInNAs and their characterization
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