Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices

• المؤلفون الرئيسيون: Chan, Mei Yin, Wei, Li, Chen, Yuan, Chan, Lap, Lee, Pooi See
• مؤلفون آخرون: School of Chemical and Biomedical Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100866; http://hdl.handle.net/10220/10480
• المؤسسة: Nanyang Technological University

We effectively tailored the charge trapping and transport behavior of a carbon nanotube field effect transistor memory device using charge interaction with underlying Ge nanoparticles in a HfO2 high-κ dielectric. We also suggest a new route for modulating the Schottky barrier at the nanotube–electro...