Charge-induced conductance modulation of carbon nanotube field effect transistor memory devices
We effectively tailored the charge trapping and transport behavior of a carbon nanotube field effect transistor memory device using charge interaction with underlying Ge nanoparticles in a HfO2 high-κ dielectric. We also suggest a new route for modulating the Schottky barrier at the nanotube–electro...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/100866 http://hdl.handle.net/10220/10480 |
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Institution: | Nanyang Technological University |
Language: | English |
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