InGaN/GaN light-emitting diode with a polarization tunnel junction

InGaN/GaN light-emitting diode with a polarization tunnel junction

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external q...

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Bibliographic Details
Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Kyaw, Zabu, Ji, Yun, Liu, Wei, Ju, Zhengang, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/101048
http://hdl.handle.net/10220/10987
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Institution: Nanyang Technological University
Language: English
Description
Summary:We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers.

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