InGaN/GaN light-emitting diode with a polarization tunnel junction

InGaN/GaN light-emitting diode with a polarization tunnel junction

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external q...

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Bibliographic Details
Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Kyaw, Zabu, Ji, Yun, Liu, Wei, Ju, Zhengang, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/101048
http://hdl.handle.net/10220/10987
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Institution: Nanyang Technological University
Language: English

Internet

https://hdl.handle.net/10356/101048
http://hdl.handle.net/10220/10987

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