InGaN/GaN light-emitting diode with a polarization tunnel junction

• Main Authors: Zhang, Zi-Hui, Tan, Swee Tiam, Kyaw, Zabu, Ji, Yun, Liu, Wei, Ju, Zhengang, Hasanov, Namig, Sun, Xiaowei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Online Access: https://hdl.handle.net/10356/101048; http://hdl.handle.net/10220/10987
• Institution: Nanyang Technological University

We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external q...