Flexible nanoscale memory device based on resistive switching in nickel oxide thin film

• Main Authors: Yu, Q., Hu, S. G., Deng, L. J., Liu, Y., Lim, Wei Meng, Chen, Tupei
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/101075; http://hdl.handle.net/10220/13694
• Institution: Nanyang Technological University

In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.